接近闭锁条件的沟槽IGBT行为

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1487999

A. Muller, F. Pfirsch, D. Silber

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引用次数: 21

摘要

通过适当的p-body/ Trench距离布局，堑壕igbt具有非常高的抗闭锁稳定性。这与仿真结果一致。并联装置的模拟导致了意想不到的交变大电流状态，这表明了动态雪崩调查中报道的移动细丝的可能性

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Trench IGBT behaviour near to latch-up conditions

Trench IGBTs show very high stability against latching with appropriate layout of the p-body/trench distance. This is in accordance with the simulation results. Simulation of parallel devices resulted in unexpected alternating high current states indicating the possibility of moving filaments as has been reported from dynamic avalanche investigations

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来源期刊

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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