Y. Ohtomo, H. Sawada, T. Ohno, Y. Sakakibara, Y. Sato, T. Ishihara, S. Matsuoka, M. Shimaya
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引用次数: 5
摘要
降低高速LSI的功耗的有效方法是使用两个电源电压。大多数电路部件的关键路径可以工作在一个电源电压低于在关键路径上的部件。例如,可以将逻辑单元块的行分配给高或低供电电压的电路,并且这种方法已用于降低使用3.3 v和1.9 v供电电压的75 mhz 0.3-/spl mu/m批量CMOS媒体处理器的功耗。在这里,我们使用完全耗尽的CMOS/SIMOX器件和2 v /1 v电源电压来增强双电源电压技术的低功耗特性,并且面积损失很小。
A low-power multi-gigabit CMOS/SIMOX LSI design using two power supply voltages
An effective way to reduce the power consumption of a high-speed LSI is to use two supply voltages. Most circuit parts off the critical path can then operate at a supply voltage lower than that of parts in the critical path. Rows of logic-cell blocks for example, can be assigned to circuits for either a high or low supply voltage, and this approach has been used to reduce the power consumption of a 75-MHz 0.3-/spl mu/m bulk CMOS media processor using both 3.3-V and 1.9-V supply voltage. Here we use a fully depleted CMOS/SIMOX device and 2-V/1-V supply voltages to enhance the low-power characteristics of the two-supply-voltage technique with a little area penalty.