{"title":"一种0.13 μm CMOS 90 dB可变增益前置功率放大器,采用鲁棒的dB内线性衰减器","authors":"Y. Araki, T. Hashimoto, S. Otaka","doi":"10.1109/RFIC.2008.4561527","DOIUrl":null,"url":null,"abstract":"A 0.13um CMOS pre-power amplifier with 90dB gain range is fabricated. The pre-power amplifier consists of 4 variable attenuators and 3 fixed gain amplifiers, where the proposed attenuator suppresses the attenuation variation due to Vth variation. The pre-power amplifier outputs +4dBm with 75mW and -80dBm with 65mW. The ACPR is -48dBc and the EVM is less than 1.0% at Pout = +4dBm. The attenuation variation of less than +/-5dB is achieved.","PeriodicalId":253375,"journal":{"name":"2008 IEEE Radio Frequency Integrated Circuits Symposium","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A 0.13 μm CMOS 90 dB variable gain pre-power amplifier using robust linear-in-dB attenuator\",\"authors\":\"Y. Araki, T. Hashimoto, S. Otaka\",\"doi\":\"10.1109/RFIC.2008.4561527\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 0.13um CMOS pre-power amplifier with 90dB gain range is fabricated. The pre-power amplifier consists of 4 variable attenuators and 3 fixed gain amplifiers, where the proposed attenuator suppresses the attenuation variation due to Vth variation. The pre-power amplifier outputs +4dBm with 75mW and -80dBm with 65mW. The ACPR is -48dBc and the EVM is less than 1.0% at Pout = +4dBm. The attenuation variation of less than +/-5dB is achieved.\",\"PeriodicalId\":253375,\"journal\":{\"name\":\"2008 IEEE Radio Frequency Integrated Circuits Symposium\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-07-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE Radio Frequency Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2008.4561527\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2008.4561527","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 0.13 μm CMOS 90 dB variable gain pre-power amplifier using robust linear-in-dB attenuator
A 0.13um CMOS pre-power amplifier with 90dB gain range is fabricated. The pre-power amplifier consists of 4 variable attenuators and 3 fixed gain amplifiers, where the proposed attenuator suppresses the attenuation variation due to Vth variation. The pre-power amplifier outputs +4dBm with 75mW and -80dBm with 65mW. The ACPR is -48dBc and the EVM is less than 1.0% at Pout = +4dBm. The attenuation variation of less than +/-5dB is achieved.