J. Ramírez-Angulo, Venkata Sailaja Kasaraneni, R. Carvajal, A. López-Martín
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Simple low voltage, low power implementations of circuits for VT extraction
Two simple implementations of circuits to extract VT are introduced. They are independent of body effect and operate on a single supply voltage VDD of less than two gate-source drops. Experimental and simulation results verify the circuit operation with a power dissipation P=60µA and with single supply VDD=1.4V in 0.5µm CMOS technology and with variations of the extracted threshold voltage of less than 0.2mV for VDD changing from 1.4V to 2.5V.
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