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引用次数: 0
摘要
SiC MOSFET开关表现出对负载电流的高度依赖，特别是在关断期间。当长电缆用于逆变器-电机连接时，SiC更高的dv/dt更快的开关需要安装输出滤波器。长电缆和dv/dt滤波器都会对开关性能产生进一步的偏差。实验研究了不同负载水平、长电缆和输出滤波器的影响，并与Si igbt的性能进行了比较。其中，负载电流对关断时间的影响最为显著。在详细表征结果的基础上，推导了负载电流与关断时间的关系，实现了控制死区时间的优化。
Characterization of 1200V 300A SiC MOSFET Switching Performance Dependence on Load-Cable -Output Filter and Control Deadtime Optimization
SiC MOSFET switching exhibits high dependence on load current, especially during switch-off. Higher dv/dt from SiC faster switching necessitates installation of output filter when long cables are used for inverter-motor connection. Both long cable and dv/dt filter introduce further deviation on switching performance. Impacts from varying load levels, long cable and output filter are investigated experimentally and compared with Si IGBTs performance in this paper. Among the variables, load current demonstrates dominant effect on turn-off time. Based on detailed characterization results, relationship between load current and turn-off time is derived for control deadtime optimization.
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