晶体结构对nge /Ge触点电性能的影响

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874682

Yunsheng Deng, O. Nakatsuka, N. Taoka, S. Zaima

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引用次数: 2

摘要

我们可以通过控制沉积方法、表面清洗和退火温度来控制Ge(110)上NiGe层的结晶结构。我们还研究了界面晶体结构对nge /Ge(110)触点电学性能的影响。我们发现，Ge表面的热清洗改善了外延nge /Ge(110)接触的界面结构，从而降低了SBH。

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Impact of crystalline structure on electrical property of NiGe/Ge contact

We can control the crystalline structure of NiGe layer on Ge(110) by controlling the deposition method, surface cleaning, and annealing temperature. We also investigated the impact of the interface crystalline structures on the electrical properties of NiGe/Ge(110) contacts. We found that thermal cleaning of Ge surface improves on the interfacial structure of the epitaxial NiGe/Ge(110) contact, that leads to lowering SBH.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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