SiC蚀刻双扩散MOS (TED MOS)提高短路性能的鲁棒性

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-13 DOI:10.1109/ISPSD.2018.8393697

N. Tega, K. Tani, D. Hisamoto, A. Shima

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引用次数: 2

摘要

设计并制造了具有抗短路能力的3.3 kv SiC槽蚀双扩散MOS (TED MOS)。由于其低电压(Vg - Vth)工作，TED MOS在SC测试中成功地将饱和区域的漏极电流降低到小于700 A/cm2。饱和区域的低漏极电流增强了TED MOS的SC能力。因此，TED MOS的SC续航时间是传统SiC DMOS的2.8倍。

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Robustness improvement of short-circuit capability by SiC trench-etched double-diffused MOS (TED MOS)

A 3.3-kV SiC trench-etched double-diffused MOS (TED MOS) is designed and fabricated for robust short-circuit (SC) capability. Because of its low-Vover (Vg — Vth) operation, the TED MOS successfully reduces the drain current in saturation region to less than 700 A/cm2 at SC tests. The low drain current in a saturation region enhances the SC capability of the TED MOS. As a result, the SC endurance time of the TED MOS is 2.8 times longer than that of the conventional SiC DMOS.

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2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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