以V2O5为绝缘体的h端金刚石misfet

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI:10.1109/CSICS.2016.7751046

S. Colangeli, C. Verona, W. Ciccognani, M. Marinelli, G. Rinati, E. Limiti, M. Benetti, D. Cannatà, F. Pietrantonio

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引用次数: 5

摘要

本文报道了一种利用五氧化二钒(V2O5)作为栅极金属和氢化单晶金刚石表面之间绝缘材料的特性实现的MISFET器件的性能。与典型的氧化物材料(如Al2O3)相反，所提出的氧化物的高电子亲和力允许潜在的金刚石衬底的p型电荷转移掺杂。比较了氢化金刚石表面添加V2O5和不添加V2O5时的电学性能，以及优化后的misfet和初步的小信号等效电路的电学性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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H-Terminated Diamond MISFETs with V2O5 as Insulator

In this work we report on the performance of a MISFET device realized by exploiting the peculiarities of Vanadium Pentoxide (V2O5) as insulating material between the gate metal and the hydrogenated single crystal diamond surface. As opposed to the typical oxide materials (such as Al2O3), the high electron affinity of the proposed oxide allows for the p-type charge transfer doping of the underlying diamond substrate. The comparison of the hydrogenated diamond surface with and without the V2O5 are reported jointly with the electrical performance of the optimized MISFETs and a preliminary small-signal equivalent circuit.

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2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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