1mev电子对单层MoS2场效应晶体管的辐照效应

2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2019-07-01 DOI:10.1109/IPFA47161.2019.8984891

Yanqing Zhang, Chunhua Qi, S. Dong, Mingxue Huo, Guoliang Ma, Xuesong Zheng, Zhengyong Hua, Jiaming Zhou, Heyi Li, Chaoming Liu, Yidan Wei, Tianqi Wang

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引用次数: 0

摘要

研究了1mev电子束辐照对单层MoS2场效应晶体管的影响。测量辐照前后的拉曼光谱和x射线光电子能谱(XPS)。结果表明，电子辐照具有较强的脱硫效果。在1.0×1012和3.0×1012cm-2的流量条件下测量了该装置的电特性。辐照后通道泄漏增大，传递电流和输出电流减小。这种现象可归因于SiO2/MoS2界面态和库仑散射的结合。我们的研究将加深对1 MeV电子对mos2基纳米电子器件影响的理解。

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Irradiation Effects of 1 MeV Electron on Monolayer MoS2 Field Effect Transistors

The effect of irradiation on monolayer MoS2 FET (field effect transistor) with 1 MeV electron beams was investigated. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) was measured before and after irradiation. The results show that electron irradiation produces a strong desulfurization effect. The electrical characteristics of the device were measured with fluence condition of 1.0×1012 and 3.0×1012cm-2. The channel leakage increases after irradiation while transfer and output current decrease. This phenomenon can be attributed to the combination of the states at the SiO2/MoS2 interfaces and Coulomb scattering. Our study will enhance the understanding of the influence of 1 MeV electron on MoS2-based nanoelectronics devices.

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2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)

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