K. Zhuravlev, A. Toropov, T. Shamirzaev, A. Bakarov, Yu.N. Rakov, Yu.B. Myakishev
{"title":"分子束外延生长高纯度AlGaAs","authors":"K. Zhuravlev, A. Toropov, T. Shamirzaev, A. Bakarov, Yu.N. Rakov, Yu.B. Myakishev","doi":"10.1109/MIAME.1999.827849","DOIUrl":null,"url":null,"abstract":"We report the growth and photoluminescence of very high quality Al/sub x/Ga/sub 1-x/As layers grown by molecular beam epitaxy over the 0<x<0.38 composition range. Heterostructure doped-channel FETs manufactured on pseudomorphic AlGaAs/InGaAs/GaAs heterostructures containing this layer have output power of about 1 W/mm with 7.8 dB gain and 60% power-added efficiency at 18 GHz.","PeriodicalId":132112,"journal":{"name":"Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289)","volume":"336 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"High purity AlGaAs grown by molecular beam epitaxy\",\"authors\":\"K. Zhuravlev, A. Toropov, T. Shamirzaev, A. Bakarov, Yu.N. Rakov, Yu.B. Myakishev\",\"doi\":\"10.1109/MIAME.1999.827849\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the growth and photoluminescence of very high quality Al/sub x/Ga/sub 1-x/As layers grown by molecular beam epitaxy over the 0<x<0.38 composition range. Heterostructure doped-channel FETs manufactured on pseudomorphic AlGaAs/InGaAs/GaAs heterostructures containing this layer have output power of about 1 W/mm with 7.8 dB gain and 60% power-added efficiency at 18 GHz.\",\"PeriodicalId\":132112,\"journal\":{\"name\":\"Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289)\",\"volume\":\"336 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-09-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIAME.1999.827849\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIAME.1999.827849","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}