采用Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)作为栅极电介质的GaAs mosfet

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI:10.1109/ICSICT.1998.786061

M. Hong

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引用次数: 0

摘要

在超高真空条件下，在清洁有序的GaAs[100]表面生长Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)氧化物混合物，产生了具有低界面态密度的原子光滑的氧化物/GaAs界面。采用这种新型氧化物作为栅极介质和传统的离子植入技术，在GaAs半绝缘衬底上实现了增强模式p沟道和n沟道GaAs金属氧化物半导体场效应晶体管(mosfet)。此外，还制备了累加耗尽型GaAs mosfet。Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)薄膜厚度为500 ~ 50 /spl Aring/，在低栅极偏压达2.5 V时，泄漏电流密度为10/sup -9/ a/ cm/sup 2/，击穿场>10 MV/cm。

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GaAs MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric

Growth of an oxide mixture, Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/), in ultra-high vacuum, on clean and ordered GaAs[100] surface has produced atomically smooth oxide/GaAs interfaces with a low interfacial density of states. Both enhancement-mode p- and n-channel GaAs metal oxide semiconductor field effect transistors (MOSFETs) on GaAs semi-insulating substrates with inversion were demonstrated using this novel oxide as the gate dielectric and a conventional ion-implant technology. Depletion-mode GaAs MOSFETs with accumulation were also fabricated. The Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) films with thickness varying from 500 to 50 /spl Aring/ show a low leakage current density of 10/sup -9/ A/cm/sup 2/ at low gate bias up to 2.5 V, and electrical breakdown fields of >10 MV/cm.

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1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

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