一种自对准气隙互连方案

2009 IEEE International Interconnect Technology Conference Pub Date : 2009-06-01 DOI:10.1109/IITC.2009.5090367

Hsien-Wei Chen, S. Jeng, H. Tsai, Yu-Wen Liu, Hsiu-Ping Wei, Douglas C. H. Yu, Y. Sun

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引用次数: 1

摘要

一种新的气隙互连方案，没有额外的图案步骤，成功地解决了无落孔的问题，并提供了良好的互连可靠性和提高封装余量。我们证明，在非常低k的电介质(k=2.5)中插入气隙可使0.07um/0.07um梳子结构的RC值降低约14%，相当于有效介电常数约为2.2。

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A self-aligned airgap interconnect scheme

A new air-gap interconnect scheme with no additional patterning step successfully resolves the issue of unlanded via, and provides good interconnect reliability and improved packaging margin. We demonstrate that the insertion of airgaps in a very low-k dielectric (k=2.5) reduces the RC value of a 0.07um/0.07um comb structure by ∼14%, which is equivalent to an effective dielectric constant about 2.2.

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2009 IEEE International Interconnect Technology Conference

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