来自VLSI封装和散热器配置的电磁辐射

C.F. Lee, K. Li, S. Y. Poh, R. Shin, J. Kong
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引用次数: 26

摘要

采用时域有限差分(FD-TD)方法分析了超大规模集成电路(VLSI)芯片封装和散热器结构的电磁辐射。FD-TD算法采用了多区域网格方案,以适应散热器和封装腔附近的精细网格单元,并在计算域的其余部分采用稀疏网格。讨论了与散热器影响整体散热能力有关的问题。通过使用简化的散热器模型和使用偶极子元素作为电磁能量源来模拟VLSI芯片,便于分析。说明了散热器结构增强杂散排放的潜力。对于典型尺寸的散热器,谐振在低千兆赫频率范围内是可能的。通过适当的实施方案,讨论和评估了散热器作为排放屏蔽的潜在开发。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electromagnetic radiation from a VLSI package and heatsink configuration
The electromagnetic radiation from a very large scale integration (VLSI) chip package and heatsink structure is analyzed by means of the finite-difference-time-domain (FD-TD) method. The FD-TD algorithm implemented incorporates a multizone gridding scheme to accommodate fine grid cells in the vicinity of the heatsink and package cavity and sparse gridding in the remainder of the computational domain. The issues pertaining to the effects of the heatsink in influencing the overall radiating capacity of the configuration are addressed. Analyses are facilitated by using simplified heatsink models and by using dipole elements as sources of electromagnetic energy to model the VLSI chip. The potential for enhancement of spurious emissions by the heatsink structure is illustrated. For heatsinks of typical dimensions, resonance is possible within the low gigahertz frequency range. The potential exploitation of the heatsink as an emissions shield by appropriate implementation schemes is discussed and evaluated.<>
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