Si和GaAs中RTP扩散和结的形成

2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2006-10-01 DOI:10.1109/RTP.2006.368000

S. Shishiyanu

{"title":"Si和GaAs中RTP扩散和结的形成","authors":"S. Shishiyanu","doi":"10.1109/RTP.2006.368000","DOIUrl":null,"url":null,"abstract":"The investigation results of the RTP enhanced diffusion of P in Si and Zn in GaAs, the mechanism, models and the role of quantum effects are presented in this paper. Shallow and ultra-shallow p+-n, n--p junctions have been obtained and analyzed. The experimental concentration profiles were simulated based on the dissociative diffusion mechanism. The diffusion coefficients and activation energies of the RTP enhanced diffusion and conventional furnace annealing was analyzed. The activation energy of RTP diffusion is lower than the conventional furnace diffusion and diffusion coefficient is higher by 1-3 order of magnitude. The p-n junctions with depth of 0.02 - 0.4 mum have been obtained by RTP for 0.1 - 3min diffusion time","PeriodicalId":114586,"journal":{"name":"2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"104 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"RTP Diffusion and Junction Formation in Si and GaAs\",\"authors\":\"S. Shishiyanu\",\"doi\":\"10.1109/RTP.2006.368000\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The investigation results of the RTP enhanced diffusion of P in Si and Zn in GaAs, the mechanism, models and the role of quantum effects are presented in this paper. Shallow and ultra-shallow p+-n, n--p junctions have been obtained and analyzed. The experimental concentration profiles were simulated based on the dissociative diffusion mechanism. The diffusion coefficients and activation energies of the RTP enhanced diffusion and conventional furnace annealing was analyzed. The activation energy of RTP diffusion is lower than the conventional furnace diffusion and diffusion coefficient is higher by 1-3 order of magnitude. The p-n junctions with depth of 0.02 - 0.4 mum have been obtained by RTP for 0.1 - 3min diffusion time\",\"PeriodicalId\":114586,\"journal\":{\"name\":\"2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors\",\"volume\":\"104 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RTP.2006.368000\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RTP.2006.368000","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

本文介绍了RTP增强砷化镓中P在Si和Zn中的扩散的研究结果，量子效应的机制、模型和作用。获得并分析了浅层和超浅层p+-n、n—p结。基于解离扩散机理，模拟了实验浓度分布。分析了RTP强化扩散和常规炉退火的扩散系数和活化能。RTP扩散的活化能低于常规炉内扩散，扩散系数提高1 ~ 3个数量级。在0.1 ~ 3min的扩散时间下，RTP得到了深度为0.02 ~ 0.4 μ m的pn结

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RTP Diffusion and Junction Formation in Si and GaAs

The investigation results of the RTP enhanced diffusion of P in Si and Zn in GaAs, the mechanism, models and the role of quantum effects are presented in this paper. Shallow and ultra-shallow p+-n, n--p junctions have been obtained and analyzed. The experimental concentration profiles were simulated based on the dissociative diffusion mechanism. The diffusion coefficients and activation energies of the RTP enhanced diffusion and conventional furnace annealing was analyzed. The activation energy of RTP diffusion is lower than the conventional furnace diffusion and diffusion coefficient is higher by 1-3 order of magnitude. The p-n junctions with depth of 0.02 - 0.4 mum have been obtained by RTP for 0.1 - 3min diffusion time

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2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors

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