{"title":"针对金刚石上硅材料的硅器件工艺评价","authors":"A. Soderbarg, B. Edholm, S. Bengtsson","doi":"10.1109/SOI.1995.526482","DOIUrl":null,"url":null,"abstract":"Silicon-on-Diamond (SOD) is a candidate for the next generation of SOI materials, especially for applications requiring high heat spreading capability. Undoped diamond is a highly electrically insulating material at temperatures below 600 K. Resistivities above 10/sup 13/ /spl Omega/cm (at 10 V) and breakdown fields above 10/sup 7/ V/cm have been reported. Diamond conducts heat about 10 times better than silicon and more than 1000 times better than silicon dioxide. In this paper, necessary process modifications for successful manufacturing of devices on SOD-materials are discussed and evaluated.","PeriodicalId":149490,"journal":{"name":"1995 IEEE International SOI Conference Proceedings","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Evaluation of silicon device processes aimed for silicon-on-diamond material\",\"authors\":\"A. Soderbarg, B. Edholm, S. Bengtsson\",\"doi\":\"10.1109/SOI.1995.526482\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Silicon-on-Diamond (SOD) is a candidate for the next generation of SOI materials, especially for applications requiring high heat spreading capability. Undoped diamond is a highly electrically insulating material at temperatures below 600 K. Resistivities above 10/sup 13/ /spl Omega/cm (at 10 V) and breakdown fields above 10/sup 7/ V/cm have been reported. Diamond conducts heat about 10 times better than silicon and more than 1000 times better than silicon dioxide. In this paper, necessary process modifications for successful manufacturing of devices on SOD-materials are discussed and evaluated.\",\"PeriodicalId\":149490,\"journal\":{\"name\":\"1995 IEEE International SOI Conference Proceedings\",\"volume\":\"75 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 IEEE International SOI Conference Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1995.526482\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1995.526482","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Evaluation of silicon device processes aimed for silicon-on-diamond material
Silicon-on-Diamond (SOD) is a candidate for the next generation of SOI materials, especially for applications requiring high heat spreading capability. Undoped diamond is a highly electrically insulating material at temperatures below 600 K. Resistivities above 10/sup 13/ /spl Omega/cm (at 10 V) and breakdown fields above 10/sup 7/ V/cm have been reported. Diamond conducts heat about 10 times better than silicon and more than 1000 times better than silicon dioxide. In this paper, necessary process modifications for successful manufacturing of devices on SOD-materials are discussed and evaluated.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
