用于非易失性存储器的非化学计量CeOx薄膜中的无电流顺应性电阻开关

2009 IEEE International Memory Workshop Pub Date : 2009-05-10 DOI:10.1109/IMW.2009.5090586

L. Liu, X. Sun, B. Sun, J. Kang, Y. Wang, X. Liu, R. Han, G. Xiong

{"title":"用于非易失性存储器的非化学计量CeOx薄膜中的无电流顺应性电阻开关","authors":"L. Liu, X. Sun, B. Sun, J. Kang, Y. Wang, X. Liu, R. Han, G. Xiong","doi":"10.1109/IMW.2009.5090586","DOIUrl":null,"url":null,"abstract":"The RS behaviors of stoichiometric and nonstoichiometric CeOx films were studied. Current compliance-free resistive switching was achieved in the nonstoichiometric CeOx film, which are helpful to remove the limitation of current compliance to simplify RRAM circuits design.","PeriodicalId":113507,"journal":{"name":"2009 IEEE International Memory Workshop","volume":"102 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Current Compliance-Free Resistive Switching in Nonstoichiometric CeOx Films for Nonvolatile Memory Application\",\"authors\":\"L. Liu, X. Sun, B. Sun, J. Kang, Y. Wang, X. Liu, R. Han, G. Xiong\",\"doi\":\"10.1109/IMW.2009.5090586\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The RS behaviors of stoichiometric and nonstoichiometric CeOx films were studied. Current compliance-free resistive switching was achieved in the nonstoichiometric CeOx film, which are helpful to remove the limitation of current compliance to simplify RRAM circuits design.\",\"PeriodicalId\":113507,\"journal\":{\"name\":\"2009 IEEE International Memory Workshop\",\"volume\":\"102 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-05-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE International Memory Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMW.2009.5090586\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Memory Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2009.5090586","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

研究了化学计量和非化学计量氧化铈薄膜的RS行为。在非化学计量CeOx薄膜上实现了无电流顺应性的电阻开关，有助于消除电流顺应性的限制，简化RRAM电路的设计。

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Current Compliance-Free Resistive Switching in Nonstoichiometric CeOx Films for Nonvolatile Memory Application

The RS behaviors of stoichiometric and nonstoichiometric CeOx films were studied. Current compliance-free resistive switching was achieved in the nonstoichiometric CeOx film, which are helpful to remove the limitation of current compliance to simplify RRAM circuits design.

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2009 IEEE International Memory Workshop

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