织构对多晶HgI2薄膜性能的影响

W. Shi, Q. Su, Dongming Li, Linjun Wang, Haokun Hu, Yiben Xia
{"title":"织构对多晶HgI2薄膜性能的影响","authors":"W. Shi, Q. Su, Dongming Li, Linjun Wang, Haokun Hu, Yiben Xia","doi":"10.1117/12.888212","DOIUrl":null,"url":null,"abstract":"Due to different oriented polycrystalline HgI2 films show different properties. In this paper the properties of different oriented HgI2 films have been investigated by scanning electron microscopy, X-ray diffraction and current-voltage measurements. The measured results indicate HgI2 films are of high quality and the properties of the (001)-oriented HgI2 film are better than those of the free oriented ones. The dark current of the (001)-oriented HgI2 film is 0.5 nA with an applied bias voltage of 40 V. The current of (001)-oriented HgI2 film keeps unchanged during measurement.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"100 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effects of texture on the properties of polycrystalline HgI2 films\",\"authors\":\"W. Shi, Q. Su, Dongming Li, Linjun Wang, Haokun Hu, Yiben Xia\",\"doi\":\"10.1117/12.888212\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Due to different oriented polycrystalline HgI2 films show different properties. In this paper the properties of different oriented HgI2 films have been investigated by scanning electron microscopy, X-ray diffraction and current-voltage measurements. The measured results indicate HgI2 films are of high quality and the properties of the (001)-oriented HgI2 film are better than those of the free oriented ones. The dark current of the (001)-oriented HgI2 film is 0.5 nA with an applied bias voltage of 40 V. The current of (001)-oriented HgI2 film keeps unchanged during measurement.\",\"PeriodicalId\":316559,\"journal\":{\"name\":\"International Conference on Thin Film Physics and Applications\",\"volume\":\"100 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-10-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Thin Film Physics and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.888212\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Thin Film Physics and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.888212","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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摘要

由于取向不同,多晶HgI2薄膜表现出不同的性能。本文采用扫描电镜、x射线衍射和电流-电压测量等方法研究了不同取向的HgI2薄膜的性能。实验结果表明,(001)取向的HgI2薄膜质量高,性能优于自由取向的HgI2薄膜。(001)取向HgI2薄膜的暗电流为0.5 nA,外加偏置电压为40 V。(001)取向HgI2薄膜的电流在测量过程中保持不变。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effects of texture on the properties of polycrystalline HgI2 films
Due to different oriented polycrystalline HgI2 films show different properties. In this paper the properties of different oriented HgI2 films have been investigated by scanning electron microscopy, X-ray diffraction and current-voltage measurements. The measured results indicate HgI2 films are of high quality and the properties of the (001)-oriented HgI2 film are better than those of the free oriented ones. The dark current of the (001)-oriented HgI2 film is 0.5 nA with an applied bias voltage of 40 V. The current of (001)-oriented HgI2 film keeps unchanged during measurement.
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