交叉耦合可控硅差分低噪声放大器ESD保护设计

Chun-Yu Lin, M. Ker, Yuan-Wen Hsiao
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引用次数: 3

摘要

提出了一种新的差分低噪声放大器静电放电保护方案。新的ESD保护方案是在传统的双二极管ESD保护方案的基础上发展而来的,不增加任何额外的器件,采用交叉耦合可控硅(SCR)实现。采用新的ESD保护方案,可以提高引脚到引脚的ESD稳健性,这是差分输入垫的最关键的ESD测试引脚组合。实验结果表明,采用交叉耦合可控硅ESD保护方案的差分LNA具有优异的ESD鲁棒性和良好的射频性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
ESD protection design for differential low-noise amplifier with cross-coupled SCR
A new electrostatic discharge (ESD) protection scheme for differential low-noise amplifier (LNA) was proposed in this paper. The new ESD protection scheme, which evolved from the conventional double-diode ESD protection scheme without adding any extra device, was realized with cross-coupled silicon-controlled rectifier (SCR). With the new ESD protection scheme, the pin-to-pin ESD robustness can be improved, which was the most critical ESD-test pin combination for differential input pads. Experimental results had shown that differential LNA with cross-coupled-SCR ESD protection scheme can achieve excellent ESD robustness and good RF performances.
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