基于28纳米CMOS FDSOI技术的原生3D SPAD像素有源淬火电路

Mohammadreza Dolatpoor Lakeh, J. Kammerer, J. Schell, D. Issartel, F. Calmon, A. Cathelin, W. Uhring
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引用次数: 0

摘要

采用28纳米CMOS全耗尽绝缘体上硅(FDSOI)技术设计了首个针对新型3D SPAD像素的有源猝灭-有源复位(AQAR)电路。由于超高速检测电路,雪崩在不到50秒的时间内被检测到,并在200秒内被淬灭。由于这种快速检测和主动淬灭,空间电荷区(SCR)的雪崩电荷减少了50%,这将导致50%的后脉冲减少。利用所提出的像素,填充因子不再受相关电路的限制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An Active Quenching Circuit for a Native 3D SPAD Pixel in a 28 nm CMOS FDSOI Technology
The first Active Quenching - Active Reset (AQAR) circuit for a novel inherent 3D SPAD pixel is designed in a 28 nm CMOS Fully Depleted Silicon On Insulator (FDSOI) technology. Thanks to an ultra-fast detection circuit, the avalanche is detected in less than 50 ps and quenched in 200 ps. Thanks to this fast detection and active quenching, the avalanche charge in the Space Charge Region (SCR) is reduced by 50 % which should result in a 50 % afterpulsing reduction. With the proposed pixel, the fill factor is no longer limited by the associated circuitry.
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