Yu-Che Chang, Jyi-Tsong Lin, Y. Eng, Cheng-Hsin Chen, Kuan-Yu Lu, Chih-Hsuan Tai, Yi-Hsuan Fan
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Study of junctionless pseudo tri-gate vertical MOSFETs for RF/analog applications
In this study, junctionless technology employed for fabricating pseudo tri-gate vertical (PTGV) MOSFETs is proposed and the RF/analog performance is also investigated and demonstrated. According to simulation results, the excellent performances such as high transconductance (gm), high cut-off frequency (ƒT), and high transconductance generation factor (gm/Id) are achieved. The numerical results also provide a prediction of an 8nm gate length PTGV and JPTGV for RF applications.
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