一种具有增强介电常数的异质外延MIM-Ta/sub 2/O/sub 5/电容器，用于g位及以上的dram

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184) Pub Date : 2001-06-12 DOI:10.1109/VLSIT.2001.934937

M. Hiratani, T. Hamada, S. Iijima, Y. Ohji, I. Asano, N. Nakanishi, S. Kimura

{"title":"一种具有增强介电常数的异质外延MIM-Ta/sub 2/O/sub 5/电容器，用于g位及以上的dram","authors":"M. Hiratani, T. Hamada, S. Iijima, Y. Ohji, I. Asano, N. Nakanishi, S. Kimura","doi":"10.1109/VLSIT.2001.934937","DOIUrl":null,"url":null,"abstract":"We demonstrate a novel MIM capacitor with a heteroepitaxial Ta/sub 2/O/sub 5/ dielectric, the permittivity of which is as high as 50. The heteroepitaxy of Ta/sub 2/O/sub 5/ on the Ru electrode changes its crystal symmetry from a conventional orthorhombic system to a hexagonal one. One-dimensional Ta-O-Ta chains along the c-axis bring about delocalized electrons, large polarizability and thus enhanced permittivity. This technology is promising for the application of Ta/sub 2/O/sub 5/ to Gbit DRAMs, eliminating the need to use such exotic materials as BST and STO.","PeriodicalId":232773,"journal":{"name":"2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184)","volume":"132 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"A heteroepitaxial MIM-Ta/sub 2/O/sub 5/ capacitor with enhanced dielectric constant for DRAMs of G-bit generation and beyond\",\"authors\":\"M. Hiratani, T. Hamada, S. Iijima, Y. Ohji, I. Asano, N. Nakanishi, S. Kimura\",\"doi\":\"10.1109/VLSIT.2001.934937\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate a novel MIM capacitor with a heteroepitaxial Ta/sub 2/O/sub 5/ dielectric, the permittivity of which is as high as 50. The heteroepitaxy of Ta/sub 2/O/sub 5/ on the Ru electrode changes its crystal symmetry from a conventional orthorhombic system to a hexagonal one. One-dimensional Ta-O-Ta chains along the c-axis bring about delocalized electrons, large polarizability and thus enhanced permittivity. This technology is promising for the application of Ta/sub 2/O/sub 5/ to Gbit DRAMs, eliminating the need to use such exotic materials as BST and STO.\",\"PeriodicalId\":232773,\"journal\":{\"name\":\"2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184)\",\"volume\":\"132 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2001.934937\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2001.934937","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 10

摘要

我们展示了一种具有异质外延Ta/sub 2/O/sub 5/介电常数的新型MIM电容器，其介电常数高达50。Ta/sub 2/O/sub 5/在Ru电极上的异质外延使其晶体对称性从传统的正交体系转变为六边形体系。沿c轴的一维Ta-O-Ta链使电子离域，极化率大，从而提高介电常数。该技术有望应用于Ta/sub 2/O/sub 5/到Gbit /s dram，消除了使用BST和STO等外来材料的需要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A heteroepitaxial MIM-Ta/sub 2/O/sub 5/ capacitor with enhanced dielectric constant for DRAMs of G-bit generation and beyond

We demonstrate a novel MIM capacitor with a heteroepitaxial Ta/sub 2/O/sub 5/ dielectric, the permittivity of which is as high as 50. The heteroepitaxy of Ta/sub 2/O/sub 5/ on the Ru electrode changes its crystal symmetry from a conventional orthorhombic system to a hexagonal one. One-dimensional Ta-O-Ta chains along the c-axis bring about delocalized electrons, large polarizability and thus enhanced permittivity. This technology is promising for the application of Ta/sub 2/O/sub 5/ to Gbit DRAMs, eliminating the need to use such exotic materials as BST and STO.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184)

自引率

0.00%

发文量