一种基于翻转电压跟随器的1V低功率低噪声生物电位放大器

2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS) Pub Date : 2015-12-01 DOI:10.1109/ICECS.2015.7440373

Tamer Farouk, M. Elkhatib, M. Dessouky

{"title":"一种基于翻转电压跟随器的1V低功率低噪声生物电位放大器","authors":"Tamer Farouk, M. Elkhatib, M. Dessouky","doi":"10.1109/ICECS.2015.7440373","DOIUrl":null,"url":null,"abstract":"This paper presents a low-voltage low-power low-noise amplifier suitable for neural recording applications. Based on the flipped voltage follower (FVF) topology, the amplifier is able to operate under a 1 V supply by alleviating the tradeoff between the noise and the voltage headroom. A gm-cell was built using FVF, its effective transconductance is not a function of the bias current, so the noise contribution of the output transistors can be decreased without increasing the bias current. This amplifier is designed and simulated in a 130 nm CMOS process. The amplifier consumes 2.2 μW from 1 V supply voltage. The input referred noise is 3.7 μVrms. The amplifier has a BW from 25 Hz to 9.9 kHz.","PeriodicalId":215448,"journal":{"name":"2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A 1V low-power low-noise biopotential amplifier based on flipped voltage follower\",\"authors\":\"Tamer Farouk, M. Elkhatib, M. Dessouky\",\"doi\":\"10.1109/ICECS.2015.7440373\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a low-voltage low-power low-noise amplifier suitable for neural recording applications. Based on the flipped voltage follower (FVF) topology, the amplifier is able to operate under a 1 V supply by alleviating the tradeoff between the noise and the voltage headroom. A gm-cell was built using FVF, its effective transconductance is not a function of the bias current, so the noise contribution of the output transistors can be decreased without increasing the bias current. This amplifier is designed and simulated in a 130 nm CMOS process. The amplifier consumes 2.2 μW from 1 V supply voltage. The input referred noise is 3.7 μVrms. The amplifier has a BW from 25 Hz to 9.9 kHz.\",\"PeriodicalId\":215448,\"journal\":{\"name\":\"2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS)\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICECS.2015.7440373\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS.2015.7440373","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

本文提出了一种适用于神经记录应用的低压、低功耗、低噪声放大器。基于翻转电压从动器(FVF)拓扑，放大器能够在1v电源下工作，减轻了噪声和电压净空之间的权衡。利用FVF技术构建了gm电池，其有效跨导不是偏置电流的函数，因此可以在不增加偏置电流的情况下降低输出晶体管的噪声贡献。该放大器在130 nm CMOS工艺下进行了设计和仿真。放大器从1v电源电压消耗2.2 μW。输入参考噪声为3.7 μVrms。放大器的BW从25 Hz到9.9 kHz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A 1V low-power low-noise biopotential amplifier based on flipped voltage follower

This paper presents a low-voltage low-power low-noise amplifier suitable for neural recording applications. Based on the flipped voltage follower (FVF) topology, the amplifier is able to operate under a 1 V supply by alleviating the tradeoff between the noise and the voltage headroom. A gm-cell was built using FVF, its effective transconductance is not a function of the bias current, so the noise contribution of the output transistors can be decreased without increasing the bias current. This amplifier is designed and simulated in a 130 nm CMOS process. The amplifier consumes 2.2 μW from 1 V supply voltage. The input referred noise is 3.7 μVrms. The amplifier has a BW from 25 Hz to 9.9 kHz.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS)

自引率

0.00%

发文量