w波段放大器的高功率密度InAlGaN/GaN-HEMT技术

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI:10.1109/CSICS.2016.7751045

K. Makiyama, Y. Niida, S. Ozaki, T. Ohki, N. Okamoto, Y. Minoura, M. Sato, Y. Kamada, K. Joshin, K. Watanabe, Y. Miyamoto

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引用次数: 3

摘要

我们使用新颖的带有80 nm栅极的InAlGaN/GaN-HEMT为大功率w波段放大器展示了出色的输出功率(Pout)密度性能。所开发的HEMT对商业产品具有基本的可靠性。采用独特的双层氮化硅(SiN)抗氧化钝化膜来抑制电流崩溃。所开发的分立InAlGaN/GaN-HEMT在96 GHz时的Pout密度达到3.0 W/mm, MMIC在86 GHz时的Pout密度达到3.6W/mm。我们使用我们独特的设备技术证明了开发的InAlGaN/GaN-HEMT的卓越潜力。此外，我们通过器件模拟器提出了InAlGaN/GaN-HEMT结构的物理优势。

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High-Power-Density InAlGaN/GaN-HEMT Technology for W-Band Amplifier

We demonstrated an excellent output power (Pout) density performance using a novel InAlGaN/GaN-HEMT with an 80-nm gate for a high-power W-band amplifier. The developed HEMT showed basic reliability for commercial products. A unique double-layer silicon nitride (SiN) passivation film with oxidation resistance was adopted to suppress current collapse. The developed discrete InAlGaN/GaN-HEMT achieved a Pout density of 3.0 W/mm at 96 GHz, and the Pout density of MMIC reached 3.6W/mm at 86 GHz. We proved excellent potential of developed InAlGaN/GaN-HEMT using our unique device technologies. Furthermore, we suggested the physical advantage of the InAlGaN/GaN-HEMT structure using device simulator.

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2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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