微电子用MIM电容器的I-V对称机制

2021 China Semiconductor Technology International Conference (CSTIC) Pub Date : 2021-03-14 DOI:10.1109/CSTIC52283.2021.9461463

W. Lau

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引用次数: 2

摘要

MIM电容器的I-V特性趋于不对称。然而，由于两种不同的机制:机制A和机制B, MIM电容器的I-V特性有时可能是对称的。对于具有超薄高k介电介质的高k MIM电容器，机制B是更可能的机制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Mechanism B I-V Symmetry for MIM Capacitors Used in Microelectronics

The I-V characteristics of MIM capacitors tend to be asymmetrical. However, the I-V characteristics of MIM capacitors can sometimes be symmetrical because of two different mechanisms: Mechanism A and Mechanism B. For high-k MIM capacitors with ultrathin high-k dielectric, Mechanism B is the more likely mechanism.

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2021 China Semiconductor Technology International Conference (CSTIC)

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