{"title":"极化电子学——通往多功能纳米材料之路","authors":"T. Myers, D. Lederman","doi":"10.1109/MELCON.2006.1653022","DOIUrl":null,"url":null,"abstract":"An oft-overlooked parameter in semiconductor-based device structures is the presence of induced or spontaneous polarization. Polarization provides an added degree of freedom that can be used to fabricate new and innovative device structures both for electronics and photonics. We present a discussion of two approaches - the use of spontaneous polarization in GaN for nanoscale photonic devices and structures, and the potential for the integration of complex oxides with GaN for induced polarization electronics","PeriodicalId":299928,"journal":{"name":"MELECON 2006 - 2006 IEEE Mediterranean Electrotechnical Conference","volume":"96 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Polarization electronics - a path to multifunctional nanoscale materials\",\"authors\":\"T. Myers, D. Lederman\",\"doi\":\"10.1109/MELCON.2006.1653022\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An oft-overlooked parameter in semiconductor-based device structures is the presence of induced or spontaneous polarization. Polarization provides an added degree of freedom that can be used to fabricate new and innovative device structures both for electronics and photonics. We present a discussion of two approaches - the use of spontaneous polarization in GaN for nanoscale photonic devices and structures, and the potential for the integration of complex oxides with GaN for induced polarization electronics\",\"PeriodicalId\":299928,\"journal\":{\"name\":\"MELECON 2006 - 2006 IEEE Mediterranean Electrotechnical Conference\",\"volume\":\"96 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-05-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"MELECON 2006 - 2006 IEEE Mediterranean Electrotechnical Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MELCON.2006.1653022\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"MELECON 2006 - 2006 IEEE Mediterranean Electrotechnical Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MELCON.2006.1653022","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Polarization electronics - a path to multifunctional nanoscale materials
An oft-overlooked parameter in semiconductor-based device structures is the presence of induced or spontaneous polarization. Polarization provides an added degree of freedom that can be used to fabricate new and innovative device structures both for electronics and photonics. We present a discussion of two approaches - the use of spontaneous polarization in GaN for nanoscale photonic devices and structures, and the potential for the integration of complex oxides with GaN for induced polarization electronics
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