Performance Analysis of FinFETs with Strained-Si Fin on Strain-Relaxed Buffer

The architecture of transistors has now switched from planar to the non-planar vertical structures. The 3-D geometry of such non-planar FinFET structures imposes new challenges especially on the computational level. Silicon channel N-type Fin shaped Field Effect Transistors (n-FinFETs) are being integrated with diamond-shaped embedded Si1−xGex fin Strain-Relaxed Buffer (SRB) to optimize the electrical performance. In this work, the stressor geometry (size and shape) effects on the device performance have been studied in detail. The mobility enhancement in n-FinFETs is observed due to process induced strain to increase the drive current. The higher percentage of Ge content shows better effect on device parameters SS, DIBL and VTH. The drain current is found to be improved for certain Ge content in the fin SRB.