基于MOSFET和FinFET的6T SRAM电池中SEU效应的分析

2022 Moscow Workshop on Electronic and Networking Technologies (MWENT) Pub Date : 2022-06-09 DOI:10.1109/MWENT55238.2022.9802398

K. Petrosyants, D. Silkin, D. Popov, M. Ismail-Zade

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引用次数: 1

摘要

对FinFET和MOSFET结构中的感应电荷进行了比较建模。对比分析了粒子撞击后各种机制对电流脉冲产生的影响。采用TCAD-SPICE模式模拟了基于MOSFET和FinFET的6T SRAM单元的SEE灵敏度。

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Analysis of SEU effects in MOSFET and FinFET based 6T SRAM Cells

Comparative modeling of induced charge in FinFET and MOSFET structures is performed. A comparative analysis of the influence of various mechanisms on the occurrence of a current pulse after a particle strike is carried out. The SEE sensitivity of the MOSFET and FinFET based 6T SRAM cells were modeled using TCAD-SPICE mode simulation.

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2022 Moscow Workshop on Electronic and Networking Technologies (MWENT)

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