CdHgTe晶体中固态富集Hg区域的出现

O. I. Vlasenko, Z. Vlasenko, P. E. Mozol'
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引用次数: 0

摘要

利用电子探针方法研究了Cd/sub -x/ Hg/sub - 1-x/Te (x = 0.2)晶体(CMT晶体)近表面宏观生长缺陷和机械加工引入的宏观缺陷的拓扑演变过程。样品长期存放后,在宏观缺陷区域形成了饱和汞或碲的包裹体。根据汞包裹体形成阶段的生长速率估算的汞的有效自扩散系数超过了文献中已知的。讨论了造成这种差异的可能原因;它们尤其与这样一个事实有关:传质过程涉及内部弹性应力,当表面被机械加工时,当扩散通量在其机制上不同时,等等。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Appearance of enriched Hg regions in solid state in CdHgTe crystals
Electron-probe methods have been used to study the evolution of the topology of near-surface macroscopic growth defects and macroscopic defects introduced by mechanical processing in Cd/sub x/Hg/sub 1-x/Te (x = 0.2) crystals (CMT crystals). When the samples were stored for a long time, the formation of inclusions saturated with mercury or tellurium was observed in the region of the macroscopic defects. The effective self-diffusion coefficients of mercury, estimated from the growth rate of the mercury inclusions at their formation stage, exceeded those known from the literature. The possible causes of such a discrepancy are discussed; they are connected, in particular, with the fact that the mass-transfer process involves internal elastic stresses that arise when the surface is mechanically processed, when diffusional fluxes that differ in their mechanisms are applied, etc.
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