Si中掺杂物高通道MeV植入物的研究(100)

2019 19th International Workshop on Junction Technology (IWJT) Pub Date : 2019-06-01 DOI:10.23919/IWJT.2019.8802900

M. Current, G. Hobler, Yoji Kawasaki

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引用次数: 2

摘要

本教程回顾了在Si中使用MeV能量掺杂剂的高通道剖面的关键问题。讨论了系统和工艺的实际问题，包括光束-晶圆对准，光束发散和晶圆温度，以及使用蒙特卡罗建模来指导工艺开发。本文概述了近年来关于提高晶片植入温度对通道MeV掺杂植入退火后残余缺陷影响的光致发光和阴极致发光结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Aspects of Highly-channeled MeV Implants of Dopants in Si(100)

This tutorial reviews key issues for use of highly-channeled profiles with MeV energy dopants in Si. Practical issues for systems and process, including beam-wafer alignment, beam divergence and wafer temperature, are discussed as well as the use of Monte-Carlo modeling to guide process development. Recent photo- and cathodo-luminescence results on the effects of elevated wafer implant temperatures on residual defects after annealing in channeled MeV dopant implants are outlined.

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来源期刊

2019 19th International Workshop on Junction Technology (IWJT)

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