{"title":"采用0.13µm CMOS工艺的24 ghz和60 ghz双频驻波压控振荡器","authors":"Liang Wu, A. Ng, L. Leung, H. Luong","doi":"10.1109/RFIC.2010.5477265","DOIUrl":null,"url":null,"abstract":"By exploiting the intrinsic multiple oscillation modes of a standing-wave oscillator, a dual-band millimeter-wave VCO is designed. Implemented in 0.13µm CMOS with an area of 0.05mm2, the VCO prototype measures a dual-band operation at 24 GHz and 60 GHz with tuning range of 10.8% and 7.2%, phase noise of −120dBc/Hz and −114dBc/Hz at 10MHz offset, power consumption of 11mW and 24mW, corresponding to FoM of −177dB and −176dB, respectively.","PeriodicalId":269027,"journal":{"name":"2010 IEEE Radio Frequency Integrated Circuits Symposium","volume":"86 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":"{\"title\":\"A 24-GHz and 60-GHz dual-band standing-wave VCO in 0.13µm CMOS process\",\"authors\":\"Liang Wu, A. Ng, L. Leung, H. Luong\",\"doi\":\"10.1109/RFIC.2010.5477265\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"By exploiting the intrinsic multiple oscillation modes of a standing-wave oscillator, a dual-band millimeter-wave VCO is designed. Implemented in 0.13µm CMOS with an area of 0.05mm2, the VCO prototype measures a dual-band operation at 24 GHz and 60 GHz with tuning range of 10.8% and 7.2%, phase noise of −120dBc/Hz and −114dBc/Hz at 10MHz offset, power consumption of 11mW and 24mW, corresponding to FoM of −177dB and −176dB, respectively.\",\"PeriodicalId\":269027,\"journal\":{\"name\":\"2010 IEEE Radio Frequency Integrated Circuits Symposium\",\"volume\":\"86 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"17\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE Radio Frequency Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2010.5477265\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2010.5477265","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 24-GHz and 60-GHz dual-band standing-wave VCO in 0.13µm CMOS process
By exploiting the intrinsic multiple oscillation modes of a standing-wave oscillator, a dual-band millimeter-wave VCO is designed. Implemented in 0.13µm CMOS with an area of 0.05mm2, the VCO prototype measures a dual-band operation at 24 GHz and 60 GHz with tuning range of 10.8% and 7.2%, phase noise of −120dBc/Hz and −114dBc/Hz at 10MHz offset, power consumption of 11mW and 24mW, corresponding to FoM of −177dB and −176dB, respectively.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
