功率器件用硅片技术综述及未来发展方向

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-13 DOI:10.1109/ISPSD.2018.8393591

N. Machida

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引用次数: 3

摘要

硅晶片在半导体器件中得到了广泛的应用。通过不懈的开发努力，它们的特性得到了改善，以满足功率器件制造商的要求，例如降低功率MOSFET的衬底电阻率和减小IGBT的电阻率变化。未来的发展方向是，利用硅片的优势，采用MCZ生长的块状硅片用于中低电压IGBT，并引入300mm尺寸的硅片。

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Si wafer technology for power devices: A review and future directions

Silicon wafers have been widely used in semiconductor devices for years. Their characteristics have been improved by untiring development efforts to meet power device manufacturers' requirements such as lowering substrate resistivity for Power MOSFET and reducing resistivity variation for IGBT. As future directions, by utilizing advantages of silicon wafers, adoption of MCZ grown bulk silicon wafers for low and middle voltage IGBT and introduction of 300mm size silicon wafers will proceed.

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来源期刊

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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