采用CHF3等离子体处理的高击穿电压和低开关损耗GaN肖特基二极管

2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2010-12-01 DOI:10.1109/EDSSC.2010.5713710

Sheng-Wen Peng, Chih-Wei Yang, Chao-Hung Cheng, Che-Kai Lin, H. Chiu

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引用次数: 1

摘要

本文提出了采用氟离子等离子体CF4和CHF3处理技术在标准AlGaN/GaN外延片上制备圆形肖特基二极管的方法。经60秒CHF3等离子体处理的肖特基二极管具有- 352V的高击穿电压和10 - 7A的低反漏电流。同时具有开关损耗小、稳定性高等特点。鉴于其优异的性能，我们提出了经CHF3等离子体处理的圆形肖特基二极管，在变换器电路中具有广阔的应用前景。

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A high breakdown voltage and low switching loss GaN schottky diode using CHF3 plasma treatment

In this study, the circular Schottky diodes fabricated on a standard AlGaN/GaN epitaxial wafer with fluorine ions plasma CF4 and CHF3 treatment technology were proposed. The Schottky diode with 60sec CHF3 plasma treated exhibits a high breakdown voltage of −352V, and a low reverse leakage current of 10⁻⁷A. It also presented low switching loss and high stability. According the outstanding performance, we proposed circular Schottky diode with CHF3 plasma treated was promising in converter circuit applications.

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2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

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