采用集成在300mm Si衬底上的RMG流中的替换翅片工艺的InGaAs/InP量子阱激光器

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers Pub Date : 2014-06-09 DOI:10.1109/VLSIT.2014.6894349

N. Waldron, C. Merckling, W. Guo, P. Ong, L. Teugels, S. Ansar, D. Tsvetanova, F. Sebaai, D. V. van Dorp, A. Milenin, D. Lin, L. Nyns, J. Mitard, A. Pourghaderi, B. Douhard, O. Richard, H. Bender, G. Boccardi, M. Caymax, M. Heyns, W. Vandervorst, K. Barla, N. Collaert, A. Thean

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引用次数: 84

摘要

采用独特的硅片替换工艺制备的InGaAs finfet已在300mm Si衬底上进行了演示。这些器件通过为si - iii混合300mm研发中线开发的工艺模块集成，兼容未来的CMOS大批量生产。在EOT为1.9nm、Lg为50nm、鳍宽为55nm的条件下，首次实现了SS为190 mV/dec、外源gm为558 μS/μm的器件。发现了不同p型掺杂水平的InP和InGaAs层的关闭状态泄漏和迁移率之间的权衡，并且证明了RMG高κ后处理比高κ先处理提供了显着的性能改进。

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An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates

InGaAs FinFETs fabricated by an unique Si fin replacement process have been demonstrated on 300mm Si substrates. The devices are integrated by process modules developed for a Si-IIIV hybrid 300mm R&D pilot line, compatible for future CMOS high-volume manufacturing. First devices with a SS of 190 mV/dec and extrinsic gm of 558 μS/μm are achieved for an EOT of 1.9nm, Lg of 50nm and fin width of 55nm. A trade-off between off state leakage and mobility for different p-type doping levels of the InP and InGaAs layers is found and the RMG high-κ last processing is demonstrated to offer significant performance improvements over that of high-κ first.

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来源期刊

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers

CiteScore

3.40

自引率

0.00%

发文量