1100v双植入平面4H-SiC引脚整流器的静态和动态特性

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764081

V. Khemka, R. Patel, N. Ramungul, T. Chow, R. Gutmann

{"title":"1100v双植入平面4H-SiC引脚整流器的静态和动态特性","authors":"V. Khemka, R. Patel, N. Ramungul, T. Chow, R. Gutmann","doi":"10.1109/ISPSD.1999.764081","DOIUrl":null,"url":null,"abstract":"Implanted, high-voltage, planar junction rectifiers in 4H-SiC are fabricated using a deep boron implanted junction along with a shallow heavily doped layer created by co-implantation of aluminum and carbon. The fabricated junctions can block up to about 1100 V with low forward drop and low leakage current. The static and dynamic characteristics of these rectifiers have been investigated at both room temperature and high temperature.","PeriodicalId":352185,"journal":{"name":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Static and dynamic characteristics of a 1100 V, double-implanted, planar, 4H-SiC PiN rectifier\",\"authors\":\"V. Khemka, R. Patel, N. Ramungul, T. Chow, R. Gutmann\",\"doi\":\"10.1109/ISPSD.1999.764081\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Implanted, high-voltage, planar junction rectifiers in 4H-SiC are fabricated using a deep boron implanted junction along with a shallow heavily doped layer created by co-implantation of aluminum and carbon. The fabricated junctions can block up to about 1100 V with low forward drop and low leakage current. The static and dynamic characteristics of these rectifiers have been investigated at both room temperature and high temperature.\",\"PeriodicalId\":352185,\"journal\":{\"name\":\"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1999.764081\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1999.764081","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

在4H-SiC中植入的高压平面结整流器采用深硼植入结以及由铝和碳共植入形成的浅重掺杂层来制造。所制备的结能以低正向压降和低漏电流阻挡高达1100v左右的电压。研究了这些整流器在室温和高温下的静态和动态特性。

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Static and dynamic characteristics of a 1100 V, double-implanted, planar, 4H-SiC PiN rectifier

Implanted, high-voltage, planar junction rectifiers in 4H-SiC are fabricated using a deep boron implanted junction along with a shallow heavily doped layer created by co-implantation of aluminum and carbon. The fabricated junctions can block up to about 1100 V with low forward drop and low leakage current. The static and dynamic characteristics of these rectifiers have been investigated at both room temperature and high temperature.

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11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

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