用于28纳米低漏CMOS突发模式移动存储器I/O的3.2 ghz 1.3 mw ILO相位旋转器

M. Aleksic
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引用次数: 5

摘要

本文提出了一种基于7位3.2 ghz注入锁定振荡器(ILO)的相位旋转器,用于突发模式移动存储器I/O。相移是通过选择注入点和从注入时钟抵消ILO的固有频率来实现的。该电路实现了两种技术,使其能够在突发模式系统中使用:1)通过强注入实现ILO的同步停止和重新启动,而不是在正常操作期间相对较弱的注入;2)相位特性校准,允许链路定时校准所需的连续、无限差相位旋转。该电路采用1 v低漏28纳米CMOS工艺实现。功耗为1.3 mW,面积为0.03 mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 3.2-GHz 1.3-mW ILO phase rotator for burst-mode mobile memory I/O in 28-nm low-leakage CMOS
This paper presents a 7-bit 3.2-GHz injection-locked oscillator (ILO) based phase rotator for burst-mode mobile memory I/O. Phase shifting is achieved by selecting the injection point and offsetting the natural frequency of the ILO from that of the injected clock. The circuit implements two techniques that enable its use in burst-mode systems: 1) synchronous stopping and restarting of the ILO achieved by strong injection, as opposed to a relatively weak injection during normal operation, and 2) phase characteristic calibration that allows continuous, infinite-throw phase rotation needed for link timing calibration. The circuit is implemented in a 1-V low-leakage 28-nm CMOS process. Power consumption and area are 1.3 mW and 0.03 mm2.
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