化学-机械平面化模拟器

Yoo-Hyon Kim, Kwang-Jae Yoo, Kyung-hyun Kim, Bo-Yeon Yoon, Young-Kwan Park, Sang-Rok Ha, J. Kong
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引用次数: 3

摘要

化学机械抛光过程的仿真具有重要的意义,因为依赖于许多动态因素的晶片级平面度和晶片级均匀度难以控制。为了预测和优化CMP工艺后的厚度分布,开发了化学机械平面化模拟器CHAMPS (chemical mechanical planarization simulator),该模拟器采用屑级图案密度和包含设备参数的弹性弹簧模型。实验结果表明,CMP模拟结果与实测数据吻合较好。该仿真器可用于优化CMP工艺条件和生成填充虚拟图案的设计规则,以提高平面性和均匀性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
CHAMPS (chemical-mechanical planarization simulator)
Simulation of chemical-mechanical polishing is important because the chip-level planarity and wafer-level uniformity dependent on many dynamic factors are difficult to control. CHAMPS (chemical mechanical planarization simulator) has been developed for predicting and optimizing the thickness distribution after the CMP process using the chip level pattern density and an elastic spring model including equipment parameters. In this work, the results of CMP simulation are shown to agree well with the measured data. This simulator can be used to optimize CMP process conditions and to generate design rules for filling dummy patterns which are used to improve planarity and uniformity.
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