纳米设计的未来性能挑战

D. Sylvester, Himanshu Kaul
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引用次数: 53

摘要

我们强调了在纳米尺度技术(即绘制特征尺寸<100纳米)中设计高性能集成电路的几个基本挑战。动态功率缩放趋势导致了主要的封装问题。为了减轻这些担忧,热监测和反馈机制可以限制最坏情况下的耗散并降低成本。此外,提倡灵活的多v /sub /+多v /sub /+尺寸调整方法,以利用超小型mosfet的固有特性并限制动态和静态功率。为了抑制跨芯片通信的功率需求,建议采用差分和低摆幅驱动等替代全局信令策略。最后,针对ITRS封装预测,讨论了潜在的电力传输挑战。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Future performance challenges in nanometer design
We highlight several fundamental challenges to designing high-performance integrated circuits in nanometer-scale technologies (i.e. drawn feature sizes <100 nm). Dynamic power scaling trends lead to major packaging problems. To alleviate these concerns, thermal monitoring and feedback mechanisms can limit worst-case dissipation and reduce costs. Furthermore, a flexible multi-V/sub dd/+multi-V/sub th/+re-sizing approach is advocated to leverage the inherent properties of ultrasmall MOSFETs and limit both dynamic and static power. Alternative global signaling strategies such as differential and low-swing drivers are recommended in order to curb the power requirements of cross-chip communication. Finally, potential power delivery challenges are addressed with respect to ITRS packaging predictions.
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