高达50GHz的硅片单和耦合共面传输线测量和模型验证

D. Goren, S. Shlafman, B. Sheinman, W. Woods, J. Rascoe
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引用次数: 5

摘要

硅技术片上单和耦合共面传输线已在高达50 GHz的晶圆上测量。采用包括L-2L技术[1,2]在内的多种方法,通过测量两条原长度和两倍长度的传输线进行脱埋。本文提出了一种利用传统双端口VNA测量耦合结构的新方法。结果以s参数格式和gamma-Zo格式进行了研究,并与EM求解器和其他地方讨论的参数化IBM共面t线器件模型进行了比较[3,4],这些模型可用于IBM CMOS和SiGe技术设计套件。通过与RC模型的比较,可以看出RC模型在频域上有效性的局限性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Silicon-chip single and coupled coplanar transmission line measurements and model verification up to 50GHz
Silicon technology on-chip single and coupled coplanar transmission lines have been measured on wafer up to 50 GHz. De-embedding was performed using various methods including the L-2L technique [1,2] by measuring two transmission lines of original and double length. A novel approach has been used for the measurement of the coupled structures using conventional two port VNA. Results are investigated both in S-parameter format and in gamma-Zo format, and compared with EM solver and the parametric IBM coplanar T-line device models discussed elsewhere [3,4] which are available in IBM CMOS and SiGe technology design kits. A comparison with RC model shows the limits of RC model validity, in frequency domain.
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