时间门控CMOS SPAD和带CMOS驱动器的量子阱激光二极管用于时间分辨漫射光学成像

2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC) Pub Date : 2018-10-01 DOI:10.1109/NORCHIP.2018.8573525

J. Nissinen, I. Nissinen, S. Jahromi, T. Talala, J. Kostamovaara

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引用次数: 4

摘要

采用150 nm CMOS工艺制备了单光子雪崩光电二极管(spad)，并对其进行了表征。SPAD基于p+/nwell结和p基板保护环。此外，一个紧凑的增益开关量子阱(QW)激光二极管与CMOS驱动器一起用于SPAD的时间分辨漫射光学测量。spad的测量脉冲响应函数(IRF)最多为~ 50 ps。测量了两个幻影，以证明spad用于时间分辨漫射光学成像(TRDOI)的适用性。

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Time-gated CMOS SPAD and a Quantum Well Laser Diode with a CMOS Driver for Time-Resolved Diffuse Optics Imaging

Single-Photon Avalanche Photodiodes (SPADs) were fabricated and characterized in 150 nm CMOS technology. The SPAD is based on a p+/nwell junction with a p-substrate guard ring. In addition, a compact gain switched quantum well (QW) laser diode with a CMOS driver was used with the proposed SPAD for time-resolved diffuse optics measurements. The measured impulse response function (IRF) of the SPADs was ∼50 ps at best. Two phantoms were measured to demonstrate the suitability of SPADs for time-resolved diffuse optics imaging (TRDOI).

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2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)

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