{"title":"采用SiGe BiCMOS技术的17.8 dBm 110-130 GHz功率放大器和倍频链","authors":"R. Ben Yishay, D. Elad","doi":"10.1109/RFIC.2015.7337787","DOIUrl":null,"url":null,"abstract":"A D-Band ×2 frequency multiplier-amplifier chain implemented in a fT/fMAX = 250/330 GHz 0.12 μm SiGe BiCMOS technology is presented. The chain achieves a peak output power of 17.8 dBm at 115 GHz and consists of input balun and push-push frequency doubler which drives a balanced three stages Power Amplifier (PA). It operates from 110 GHz to 130 GHz (3 dB power bandwidth) with -2 dBm input power at V-Band and consumes a total DC power of 600 mW. The PA achieves output 1 dB compression point and saturated power of 13.5 and 17.6 dBm, respectively, at 120 GHz and peak small signal gain of 32 dB.","PeriodicalId":121490,"journal":{"name":"2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":"{\"title\":\"A 17.8 dBm 110–130 GHz Power Amplifier and doubler chain in SiGe BiCMOS technology\",\"authors\":\"R. Ben Yishay, D. Elad\",\"doi\":\"10.1109/RFIC.2015.7337787\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A D-Band ×2 frequency multiplier-amplifier chain implemented in a fT/fMAX = 250/330 GHz 0.12 μm SiGe BiCMOS technology is presented. The chain achieves a peak output power of 17.8 dBm at 115 GHz and consists of input balun and push-push frequency doubler which drives a balanced three stages Power Amplifier (PA). It operates from 110 GHz to 130 GHz (3 dB power bandwidth) with -2 dBm input power at V-Band and consumes a total DC power of 600 mW. The PA achieves output 1 dB compression point and saturated power of 13.5 and 17.6 dBm, respectively, at 120 GHz and peak small signal gain of 32 dB.\",\"PeriodicalId\":121490,\"journal\":{\"name\":\"2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"volume\":\"102 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"17\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2015.7337787\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2015.7337787","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 17.8 dBm 110–130 GHz Power Amplifier and doubler chain in SiGe BiCMOS technology
A D-Band ×2 frequency multiplier-amplifier chain implemented in a fT/fMAX = 250/330 GHz 0.12 μm SiGe BiCMOS technology is presented. The chain achieves a peak output power of 17.8 dBm at 115 GHz and consists of input balun and push-push frequency doubler which drives a balanced three stages Power Amplifier (PA). It operates from 110 GHz to 130 GHz (3 dB power bandwidth) with -2 dBm input power at V-Band and consumes a total DC power of 600 mW. The PA achieves output 1 dB compression point and saturated power of 13.5 and 17.6 dBm, respectively, at 120 GHz and peak small signal gain of 32 dB.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
