采用90 nm SiGe BiCMOS技术的14 dBm 110-130 GHz功率放大器和倍频链

2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 1900-01-01 DOI:10.1109/SIRF.2016.7445486

R. Ben Yishay, D. Elad

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引用次数: 6

摘要

提出了一种采用先进的90nm SiGe BiCMOS技术实现的d波段x2倍频放大器链。该链的峰值输出功率为14 dBm，由输入平衡器和推推式倍频器组成，驱动单端三级功率放大器(PA)。它的工作频率为110 GHz至130 GHz(功率带宽为3db)， V波段输入功率为5dbm，从1.6 V电源中消耗的总直流功率为200mw。独立的倍频器在110-130 GHz时实现输出功率>5 dBm，占地面积仅为0.15 mm2。

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A 14 dBm 110–130 GHz power amplifier and doubler chain in 90 nm SiGe BiCMOS technology

A D-Band x2 frequency multiplier-amplifier chain implemented in an advanced 90 nm SiGe BiCMOS technology is presented. The chain achieves a peak output power of 14 dBm and consists of input balun and push-push frequency doubler which drives a single-ended three stages Power Amplifier (PA). It operates from 110 GHz to 130 GHz (3 dB power bandwidth) with 5 dBm input power at V-Band and consumes a total DC power of 200 mW from a 1.6 V supply. The stand-alone doubler achieves output power >5 dBm at 110-130 GHz and occupies area of only 0.15 mm2.

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来源期刊

2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

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