应变硅作为新型高速技术

International Workshops and Tutorials on Electron Devices and Materials Pub Date : 2006-07-01 DOI:10.1109/SIBEDM.2006.231994

A. Shapin, S. Kalinin

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引用次数: 0

摘要

本文讨论了应变硅技术在通信设备中的基本发展前景、工作频率超过350 GHz的MOSFET和更好的用于无线集成电路(IC)的异质双极晶体管(HBT)的设计和原理，并与GaAs和SiGe的性能数据进行了分析和比较

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Strained-Silicon as New High-Speed Technology

In the report we consider the basic prospects of development of strained-silicon technology in a communication facility, designs and principle of action MOSFET and the better hetero bipolar transistor (HBT) for wireless integrated circuit (IC), which working on frequencies of exceeding 350 GHz, analyze and compare performance data of HBT with GaAs and SiGe

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International Workshops and Tutorials on Electron Devices and Materials

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