低维硅隧道二极管中掺杂剂诱导的能带间隧穿机制

G. Prabhudesai, G. Greeshma, M. Shibuya, M. Manoharan, H. Mizuta, M. Tabe, D. Moraru
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引用次数: 0

摘要

硅中的带间隧道效应是Esaki二极管和隧道场效应管的关键机制。在纳米器件中,高内嵌电场作用下掺杂态对带间隧道输运有显著影响。本文首次介绍了纳米级硅隧道二极管的两种主要效应:(1)在高电场下掺杂微粒带的分裂,类似于wanner - stark阶梯;(ii)单电荷隧穿传输通过电场排列的供体-受体对。这些现象对增强带间隧道电流产生了明显的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Inter-band tunneling mechanisms via dopant-induced energy states in low-dimensional si tunnel diodes
Inter-band tunneling in Si is a key mechanism for Esaki diodes and tunnel FETs. In nanoscale devices, the dopant states under high built-in electric field may significantly affect inter-band tunneling transport. Here, we introduce firsttime observations from measurements of nanoscale Si tunnel diodes of two main effects: (i) splitting of dopant minibands in high electric field, similarly to the Wannier-Stark ladder; (ii) single-charge tunneling transport via donor-acceptor pairs aligned by the electric field. These phenomena produce distinguishable effects to enhance inter-band tunneling current.
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