在日常结构分析中检测到内存芯片的故障机制

Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing Pub Date : 1999-08-09 DOI:10.1109/MTDT.1999.782681

Sue Brown, Jeff Campbell, Sherri Griffin, D. James, R. Haythornthwaite

{"title":"在日常结构分析中检测到内存芯片的故障机制","authors":"Sue Brown, Jeff Campbell, Sherri Griffin, D. James, R. Haythornthwaite","doi":"10.1109/MTDT.1999.782681","DOIUrl":null,"url":null,"abstract":"Construction analysis is a useful tool to determine microcircuit structure and identify potential failure mechanisms. Cross sectioning procedures used in construction analysis have revealed two possible failure mechanisms. One mechanism involving the use of SOG results in poor adhesion and delamination. The other mechanism permits the corrosion of internal conductors through a combination of discontinuities in the passivation at growth boundaries and internal damage.","PeriodicalId":166999,"journal":{"name":"Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Failure mechanisms detected in memory chips during routine construction analysis\",\"authors\":\"Sue Brown, Jeff Campbell, Sherri Griffin, D. James, R. Haythornthwaite\",\"doi\":\"10.1109/MTDT.1999.782681\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Construction analysis is a useful tool to determine microcircuit structure and identify potential failure mechanisms. Cross sectioning procedures used in construction analysis have revealed two possible failure mechanisms. One mechanism involving the use of SOG results in poor adhesion and delamination. The other mechanism permits the corrosion of internal conductors through a combination of discontinuities in the passivation at growth boundaries and internal damage.\",\"PeriodicalId\":166999,\"journal\":{\"name\":\"Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-08-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MTDT.1999.782681\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTDT.1999.782681","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

结构分析是确定微电路结构和识别潜在故障机制的有用工具。在结构分析中使用的横截面程序揭示了两种可能的破坏机制。一种涉及使用SOG的机制导致粘合不良和分层。另一种机制允许内部导体通过生长边界钝化不连续和内部损伤的结合而腐蚀。

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Failure mechanisms detected in memory chips during routine construction analysis

Construction analysis is a useful tool to determine microcircuit structure and identify potential failure mechanisms. Cross sectioning procedures used in construction analysis have revealed two possible failure mechanisms. One mechanism involving the use of SOG results in poor adhesion and delamination. The other mechanism permits the corrosion of internal conductors through a combination of discontinuities in the passivation at growth boundaries and internal damage.

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Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing

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