双栅并五苯有机场效应晶体管性能的仿真研究

2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS) Pub Date : 2020-07-01 DOI:10.1109/VLSIDCS47293.2020.9179743

Ranita Halder, A. Sarkar

{"title":"双栅并五苯有机场效应晶体管性能的仿真研究","authors":"Ranita Halder, A. Sarkar","doi":"10.1109/VLSIDCS47293.2020.9179743","DOIUrl":null,"url":null,"abstract":"Comparative analysis between single gate organic FET and double gate is presented in terms of performance parameters such as ON-OFF current ratio, threshold voltage VTh, mobility µ, transconductance gm, output conductance gds using TCAD device simulator. Effect of structural parameters and bias voltages on drain current is analyzed. Use of High-k dielectric and double gate configuration shows remarkable improvement in terms of higher drain current and performance parameters than single gate organic FET.","PeriodicalId":446218,"journal":{"name":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","volume":"203 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Performance Evaluation of Double Gate Pentacene Organic FET Using Simulation Study\",\"authors\":\"Ranita Halder, A. Sarkar\",\"doi\":\"10.1109/VLSIDCS47293.2020.9179743\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Comparative analysis between single gate organic FET and double gate is presented in terms of performance parameters such as ON-OFF current ratio, threshold voltage VTh, mobility µ, transconductance gm, output conductance gds using TCAD device simulator. Effect of structural parameters and bias voltages on drain current is analyzed. Use of High-k dielectric and double gate configuration shows remarkable improvement in terms of higher drain current and performance parameters than single gate organic FET.\",\"PeriodicalId\":446218,\"journal\":{\"name\":\"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)\",\"volume\":\"203 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIDCS47293.2020.9179743\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIDCS47293.2020.9179743","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

利用TCAD器件模拟器对单栅有机场效应管和双栅有机场效应管的通断电流比、阈值电压VTh、迁移率µ、跨导gm、输出电导gds等性能参数进行了比较分析。分析了结构参数和偏置电压对漏极电流的影响。使用高k介电介质和双栅极结构，在更高的漏极电流和性能参数方面比单栅极有机场效应管有显著的改善。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Performance Evaluation of Double Gate Pentacene Organic FET Using Simulation Study

Comparative analysis between single gate organic FET and double gate is presented in terms of performance parameters such as ON-OFF current ratio, threshold voltage VTh, mobility µ, transconductance gm, output conductance gds using TCAD device simulator. Effect of structural parameters and bias voltages on drain current is analyzed. Use of High-k dielectric and double gate configuration shows remarkable improvement in terms of higher drain current and performance parameters than single gate organic FET.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)

自引率

0.00%

发文量