{"title":"AlGaAs/InGaAs/GaAs HEMT功率晶体管的安全工作区域","authors":"V. Pala, M. Hella, T. Chow","doi":"10.1109/ISPSD.2011.5890836","DOIUrl":null,"url":null,"abstract":"A study of the physical phenomena leading to second breakdown of AlGaAs/InGaAs/GaAs power HEMTs in high voltage and high current conditions is presented. The boundary of the safe operating area (SOA) is measured in both DC and pulsed conditions. The effect of gate de-biasing and triggering of the parasitic bipolar transistor are identified as reasons for deterioration of the SOA. A model for these effects is also presented.","PeriodicalId":132504,"journal":{"name":"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Safe operating area of AlGaAs/InGaAs/GaAs HEMT power transistors\",\"authors\":\"V. Pala, M. Hella, T. Chow\",\"doi\":\"10.1109/ISPSD.2011.5890836\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A study of the physical phenomena leading to second breakdown of AlGaAs/InGaAs/GaAs power HEMTs in high voltage and high current conditions is presented. The boundary of the safe operating area (SOA) is measured in both DC and pulsed conditions. The effect of gate de-biasing and triggering of the parasitic bipolar transistor are identified as reasons for deterioration of the SOA. A model for these effects is also presented.\",\"PeriodicalId\":132504,\"journal\":{\"name\":\"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2011.5890836\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2011.5890836","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Safe operating area of AlGaAs/InGaAs/GaAs HEMT power transistors
A study of the physical phenomena leading to second breakdown of AlGaAs/InGaAs/GaAs power HEMTs in high voltage and high current conditions is presented. The boundary of the safe operating area (SOA) is measured in both DC and pulsed conditions. The effect of gate de-biasing and triggering of the parasitic bipolar transistor are identified as reasons for deterioration of the SOA. A model for these effects is also presented.
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