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40ns CMOS E2PROM

1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1982.1156402
R. Stewart, D. Plus
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引用次数: 0

摘要

本文将报道一个8K CMOS/SOS E2PROM，在5V下，功耗为60mW，写入电压低至12V，访问时间为38ns。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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A 40ns CMOS E2PROM
This Paper will report on an 8K CMOS/SOS E2PROM with an access time of 38ns at 5V, 60mW power dissipation and write voltage as low as 12V.
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1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers
1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers
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