改善了薄InP雪崩区倍增特性的过量噪声和温度依赖性

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI:10.1109/ICIPRM.1999.773693

C. H. Tan, K.F. Li, S. Plimmer, J. David, G. Rees, J. Clark, C. Button

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引用次数: 2

摘要

我们报告了在室温下电子引发雪崩噪声的测量，测量范围为InP p/sup +/-i-n/sup +/二极管，其i-区域宽度M范围为2.40 /spl mu/ M至0.24 /spl mu/ M。在恒定乘法下，随着w的减小，观察到多余噪声的显著减少。我们还报道了InP p/sup +/-i-n/sup +/二极管的电子激发光电倍增和击穿电压，标称i区宽度为0.30 /spl mu/m和0.50 /spl mu/m，温度范围为20 K至300 K。随着雪崩区宽度的减小，温度稳定性得到了改善。

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Improved excess noise and temperature dependence of multiplication characteristics in thin InP avalanching regions

We report measurements of electron initiated avalanche noise at room temperature in a range of InP p/sup +/-i-n/sup +/ diodes with i-region widths, M ranging from 2.40 /spl mu/m to 0.24 /spl mu/m. A significant reduction in excess noise is observed with decreasing w at constant multiplication. We also report electron initiated photomultiplication and breakdown voltage of InP p/sup +/-i-n/sup +/ diodes with nominal i-region widths of 0.30 /spl mu/m and 0.50 /spl mu/m at temperatures ranging from 20 K to 300 K. Improved temperature stability is observed as the avalanche region width is reduced.

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Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)

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