百万像素双频QWIP焦平面阵列的首次演示

S. Gunapala, S. Bandara, J. Liu, J. Mumolo, D. Ting, C. Hill, J. Nguyen
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引用次数: 7

摘要

量子阱红外探测器(qwip)以其稳定性、高像素均匀性和高像素可操作性而闻名,这是大面积成像阵列的典型参数。在本文中,我们报道了百万像素同时可读和像素共配的双频QWIP焦平面阵列(FPA)的首次演示。双频QWIP器件是通过叠加两个多量子阱堆栈来开发的,这些堆栈可以吸收两种不同的红外波长。中波红外(MWIR)波段半最大值全宽度(FWHM)为4.4 ~ 5.1µm,长波红外(LWIR)波段半最大值全宽度为7.8 ~ 8.8µm。双带QWIP探测器阵列采用铟bump杂交技术与直接注入30µm像素间距百万像素双带同步可读CMOS读出集成电路杂交。最初的双频百万像素QWIP fpga被冷却到68K工作温度。从第一个百万像素QWIP FPA上获得的初步数据显示,系统在中wir和低wir波段分别为27和40 mK。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
First demonstration of megapixel dual-band QWIP focal plane array
Quantum well infrared photodetectors (QWIPs) are well known for their stability, high pixel-pixel uniformity and high pixel operability which are quintessential parameters for large area imaging arrays. In this paper we report the first demonstration of the megapixel-simultaneously-readable and pixel-co-registered dual-band QWIP focal plane array (FPA). The dual-band QWIP device was developed by stacking two multi-quantum-well stacks tuned to absorb two different infrared wavelengths. The full width at half maximum (FWHM) of the mid-wave infrared (MWIR) band extends from 4.4 – 5.1 µm and FWHM of the long-wave infrared (LWIR) band extends from 7.8 – 8.8 µm. Dual-band QWIP detector arrays were hybridized with direct injection 30 µm pixel pitch megapixel dual-band simultaneously readable CMOS read out integrated circuits using the indium bump hybridization technique. The initial dual-band megapixel QWIP FPAs were cooled to 68K operating temperature. The preliminary data taken from the first megapixel QWIP FPA has shown system NEΔT of 27 and 40 mK for MWIR and LWIR bands respectively.
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