Tackhwi Lee, S. Rhee, C. Kang, F. Zhu, Manhong Zhang, H. Kim, C. Choi, I. Ok, S. Koveshnikov, Hokyung Park, Jack C. Lee
{"title":"将层状镝(Dy2O3)介电体掺入HfO2栅极堆改善MOSFET特性","authors":"Tackhwi Lee, S. Rhee, C. Kang, F. Zhu, Manhong Zhang, H. Kim, C. Choi, I. Ok, S. Koveshnikov, Hokyung Park, Jack C. Lee","doi":"10.1109/DRC.2006.305122","DOIUrl":null,"url":null,"abstract":"New structural approach of Dy2O3 incorporated HfO2 multi-metal oxide n-MOSFETs and their electrical characterization are investigated for the first time. Top Dy2O3 laminated HfO2 bi-layer structure shows the thinnest EOT with reduced leakage current compared to control HfO2. Improved electrical characteristics such as lower VT, higher drive current and channel electron mobility are demonstrated. In addition, better VT instabilities, reduced dielectric charge trapping, and less Ta penetration from TaN metal gate electrode are obtained in Dy2O3/HfO2 structure. Finally, reduced phonon scattering is found to be the plausible mechanism for higher channel mobility.","PeriodicalId":259981,"journal":{"name":"2006 64th Device Research Conference","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improved MOSFET characteristics by Incorporating Laminated Dysprosium (Dy2O3) Dielectric into HfO2 Gate Stack\",\"authors\":\"Tackhwi Lee, S. Rhee, C. Kang, F. Zhu, Manhong Zhang, H. Kim, C. Choi, I. Ok, S. Koveshnikov, Hokyung Park, Jack C. Lee\",\"doi\":\"10.1109/DRC.2006.305122\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"New structural approach of Dy2O3 incorporated HfO2 multi-metal oxide n-MOSFETs and their electrical characterization are investigated for the first time. Top Dy2O3 laminated HfO2 bi-layer structure shows the thinnest EOT with reduced leakage current compared to control HfO2. Improved electrical characteristics such as lower VT, higher drive current and channel electron mobility are demonstrated. In addition, better VT instabilities, reduced dielectric charge trapping, and less Ta penetration from TaN metal gate electrode are obtained in Dy2O3/HfO2 structure. Finally, reduced phonon scattering is found to be the plausible mechanism for higher channel mobility.\",\"PeriodicalId\":259981,\"journal\":{\"name\":\"2006 64th Device Research Conference\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 64th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2006.305122\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 64th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2006.305122","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Improved MOSFET characteristics by Incorporating Laminated Dysprosium (Dy2O3) Dielectric into HfO2 Gate Stack
New structural approach of Dy2O3 incorporated HfO2 multi-metal oxide n-MOSFETs and their electrical characterization are investigated for the first time. Top Dy2O3 laminated HfO2 bi-layer structure shows the thinnest EOT with reduced leakage current compared to control HfO2. Improved electrical characteristics such as lower VT, higher drive current and channel electron mobility are demonstrated. In addition, better VT instabilities, reduced dielectric charge trapping, and less Ta penetration from TaN metal gate electrode are obtained in Dy2O3/HfO2 structure. Finally, reduced phonon scattering is found to be the plausible mechanism for higher channel mobility.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
